SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
40
10
Source-Drain Diode Forward Voltage
T J = 150 _ C
0.08
0.07
0.06
0.05
On-Resistance vs. Gate-to-Source Voltage
T A = 125 _ C
T J = 25 _ C
0.04
0.03
T A = 25 _ C
1
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
10
3.4
3.1
V SD – Source-to-Drain Voltage (V)
Threshold Voltage
I D = 250 m A
35
30
25
V GS – Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
2.8
20
2.5
15
2.2
10
1.9
1.6
5
0
–50
–25
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
T J – Temperature ( _ C)
100
Safe Operating Area, Junction-to-Ambient
Time (sec)
*Limited by r DS(on)
10
1
0.1
0.01
0.001
T A = 25 _ C
Single Pulse
100 m s
1 ms
10 ms
100 ms
1s
10 s
dc
0.1
1
10
100
1000
V DS – Drain-to-Source Voltage (V)
*V GS u minimum V GS at which r DS(on) is specified
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4
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
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